Contact Address: Texas Instruments Incorporated,
13121 TI Blvd, MS-365, Dallas, TX 75243, US
Luigi Colombo was born in Italy and was educated in the United States where he obtained a B.S. in Physics in 1975, and a Ph.D. in Materials Science in 1980 from the University of Rochester. He joined Texas Instruments (TI) in 1981 where he worked on a variety of materials research and development programs. The principal accomplishments at TI were the development of a liquid phase epitaxy production process of HgCdTe on CdZnTe substrates for infrared detectors (still in production), a chemical vapor deposition (CVD) process BaSrTiO3 as a high-k capacitor material for random access memories, a nitrided Hf-silicate CVD process and a low leakage scaled SiON for 45 nm transistors all of which were taken from the research stage to full production. Recently, in collaboration with the Ruoff group at the University of Texas at Austin, he discovered and developed a large area graphene film growth process on Cu substrates. He now manages the external research and development activities where in collaboration with several university professors he is developing new device flows for beyond CMOS devices. Luigi has also authored and co-authored over 140 refereed papers, made over 150 invited and contributed presentations, has written 3 chapters in edited books, and holds 108 US and international patents. In 1999 he was elected to the level of Fellow at TI, in 2011 he was elected IEEE Fellow, in 2011 he was also granted the distinction of “Cavaliere dell’Ordine “Stella della Solidarieta Italiana””, and has been an Adjunct Professor in the Department of Materials Science & Engineering at the University of Texas at Dallas since 2009.